TOKYO, March 1, 2017 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more, effective immediately.
|SiC-SBD||BD20060T||TO-220||20A/600V||Mar. 1, 2017|
|BD20060S||TO-247||Sep. 1, 2017|
Note that the releases are accurate at the time of publication but may be subject to change without notice.