FOR IMMEDIATE RELEASE No. 3417
TOKYO, June 9, 2021 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the world's first IGBT1 with 2.0kV withstand voltage, on June 30. The module is ideally suited to increase the efficiency and reduce the size of renewable-energy power converters, which are in high demand due to the growing use of renewable-energy power supplies. The module will be exhibited at the Applied Power Electronics Conference (APEC) 2021 Virtual Exposition from June 15 to 16.
T-series 2.0kV IGBT Module for Industrial Use (2.0kV/400A)
Power semiconductors for efficiently controlling electric power are attracting wider application and increasing demand as key devices that can help to lower the carbon footprint of global society. Meanwhile, power grids that use renewable-energy power sources are required to realize increasingly higher power-conversion efficiency through deployment of higher system operating voltages. For this purpose, power converters rated at DC1500V, the upper limit of the Low Voltage Directive5, have been developed. In response, Mitsubishi Electric will soon launch its 2.0kV IGBT T-series suitable for DC1500V power converters, which is expected to help simplify the design and downsizing of such converters as well as raise their efficiency.
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